Quantum computers is the Future?

Electroluminescence (EL) is an optical phenomenon and electrical phenomenon in which a material emits light in response to the passage of an electric current or to a strong electric field. This is distinct from black body light emission resulting from heat (incandescence), from a chemical reaction (chemiluminescence), sound (sonoluminescence), or other mechanical action (mechanoluminescence).
Electroluminescence is the result of radiative recombination of electrons and holes in a material, usually a semiconductor. The excited electrons release their energy as photons – light. Prior to recombination, electrons and holes may be separated either by doping the material to form a p-n junction (in semiconductor electroluminescent devices such as light-emitting diodes) or through excitation by impact of high-energy electrons accelerated by a strong electric field (as with the phosphors in electroluminescent displays).
Electroluminescent devices are fabricated using either organic or inorganic electroluminescent materials. The active materials are generally semiconductors of wide enough bandwidth to allow exit of the light.
The most typical inorganic thin-film EL (TFEL) is ZnS:Mn with yellow-orange emission. Examples of the range of EL material include:

Electroluminescent technologies have low power consumption compared to competing lighting technologies, such as neon or fluorescent lamps. This, together with the thinness of the material, has made EL technology valuable to the advertising industry. Relevant advertising applications include electroluminescent billboards and signs. EL manufacturers are able to control precisely which areas of an electroluminescent sheet illuminate, and when. This has given advertisers the ability to create more dynamic advertising that is still compatible with traditional advertising spaces.
An EL film is a so-called Lambertian radiator: unlike with neon lamps, filament lamps, or LEDs, the brightness of the surface appears the same from all angles of view; electroluminescent light is not directional and therefore hard to compare with (thermal) light sources measured in lumens or lux. The light emitted from the surface is perfectly homogeneous and is well-perceived by the eye. EL film produces single-frequency (monochromatic) light that has a very narrow bandwidth, is absolutely uniform and visible from a great distance.

It can be modified on certain materials to create a semi-conductor, and edge out on a thin film to create the first design of a all-into-one computer chip or a series of chips that will facilitate ultra fast processing with billions and billions of teraflops. You need to invent that material. And that material could be diamond, or a diamond derivative material. Let’s look at the properties, is it suitable for ultra fast data processing of billions and billions of teraflops a second?


Gallium Arsenide
One of the first GaAs microprocessors was developed in the early 1980s by the RCA corporation and was considered for the Star Wars program of the United States Department of Defense. Those processors were several times faster and several orders of magnitude more radiation hard than silicon counterparts, but they were rather expensive.[7] Other GaAs processors were implemented by the supercomputer vendors Cray Computer Corporation, Convex, and Alliant in an attempt to stay ahead of the ever-improving CMOS microprocessor. Cray eventually built one GaAs-based machine in the early 1990s, the Cray-3, but the effort was not adequately capitalized, and the company filed for bankruptcy in 1995.
Complex layered structures of gallium arsenide in combination with aluminium arsenide (AlAs) or the alloy AlxGa1-xAs can be grown using molecular beam epitaxy (MBE) or using metalorganic vapor phase epitaxy (MOVPE). Because GaAs and AlAs have almost the same lattice constant, the layers have very little induced strain, which allows them to be grown almost arbitrarily thick. This allows for extremely high performance high electron mobility, HEMT transistors and other quantum well devices.
Indium Gallium Arsenide
InGaAs can be used as a laser medium. Devices have been constructed operating at wavelengths of 905 nm, 980 nm, 1060 nm, and 1300 nm. InGaAs quantum dots on GaAs have also been studied as lasers.
In0.015Ga0.985As can be used as an intermediate band-gap junction in multi-junction photovoltaic cells with a perfect lattice match to Ge. The perfect lattice match to Ge reduces defect density, improving cell efficiency.
Gallium Nitrade
GaN is a very hard, mechanically stable wide bandgap semiconductor material with high heat capacity and thermal conductivity.[6] In its pure form it resists cracking and can be deposited in thin film on sapphire or silicon carbide, despite the mismatch in their lattice constants.[6] GaN can be doped with silicon (Si) or with oxygen[7] to n-type and with magnesium (Mg) to p-type;[8] however, the Si and Mg atoms change the way the GaN crystals grow, introducing tensile stresses and making them brittle.[9] Gallium nitride compounds also tend to have a high spatial defect frequency, on the order of a hundred million to ten billion defects per square centimeter.[10]

I have given you an insight to technologies that will take a lifetime to build, but now it can be achieved within the next 5 years, God is not a destroyer, He is not interested in taking over the entire world to be King, even though He already is, the world will go as usual, but nobody can claim they own everything, the logic behind fair play, to give everybody a stake in the future.
Everybody can combine resources to carry on the research to bring it to the markets, the market is so big you do not have to worry about competition anymore, I have created jobs that will last a lifetime for everyone. I do not need to be a rich man as I already control the world, everyone is my beneficiary, and I will achieve all my goals.
– Contributed by Oogle.

Author: Gilbert Tan TS

IT expert with more than 20 years experience in Multiple OS, Security, Data & Internet , Interests include AI and Big Data, Internet and multimedia. An experienced Real Estate agent, Insurance agent, and a Futures trader. I am capable of finding any answers in the world you want as long as there are reports available online for me to do my own research to bring you closest to all the unsolved mysteries in this world, because I can find all the paths to the Truth, and what the Future holds. All I need is to observe, test and probe to research on anything I want, what you need to do will take months to achieve, all I need is a few hours.​

Leave a Reply

Fill in your details below or click an icon to log in:

WordPress.com Logo

You are commenting using your WordPress.com account. Log Out /  Change )

Google photo

You are commenting using your Google account. Log Out /  Change )

Twitter picture

You are commenting using your Twitter account. Log Out /  Change )

Facebook photo

You are commenting using your Facebook account. Log Out /  Change )

Connecting to %s